Tekscend Photomask delivers high-accuracy photomasks used across semiconductor manufacturing, from mature nodes to leading-edge lithography. Designed for maximum fidelity and stability, our masks support critical dimension accuracy, superior pattern transfer, and consistent performance across high-volume production.
From binary masks to phase-shift and EUV reflective masks, Tekscend provides a full portfolio engineered to meet the exacting demands of modern wafer fabrication.
Complete photomask portfolio
Binary masks, phase-shift masks (halftone and alternating), and EUV reflective masks supporting a wide range of lithography wavelengths and node requirements.
Exceptional pattern accuracy
High-fidelity circuit patterning with tight CD control, ensuring uniformity, resolution, and reproducibility across mask sets.
Advanced materials and blanks
Includes innovative mask blanks such as Opaque MoSi on Glass (OMOG), offering improved workability and superior optical performance.
Precision inspection and defect control
Comprehensive metrology, inspection, and repair processes ensure defect-free masks with outstanding pattern integrity.
High-volume manufacturing capability
Eight global manufacturing sites provide scalability, fast turnaround, and robust supply chain support for semiconductor fabs worldwide.
EUV-ready solutions
Reflective multilayer masks engineered for extreme ultraviolet lithography, enabling advanced node patterning with optimal reflectivity and surface quality.
Tekscend photomasks are ideal for:
Specification | Description |
Mask Types | Binary, Halftone PSM, Alternating PSM, EUV Reflective |
Minimum Feature Size | Sub-100 nm capability (process dependent) |
Blank Materials | Quartz, OMOG, MoSi-based blanks, EUV multilayers |
Wavelength Compatibility | i-line, KrF, ArF, EUV |
Inspection | Advanced CD metrology, defect inspection, repair |
Production Scope | Full mask set production, single-layer masks, R&D masks |
Manufacturing Sites | Multiple global fabrication facilities |
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